PNP Transistor
Description
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB1372
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD2065 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-140
V
VCEO
Collector-Emitter Voltage
-140
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-7
A
ICP
Collector Current-Pulse
Collector Power Dissipation @ TC=25℃
PC Collector Power Dissipation @ Ta=25℃
TJ
Junction Temperature
-12
A
80 W
3
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB1372
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.
5A
VBE(on) Base -Emitter On Voltage
IC= -5A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -140V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -3V; IC= 0
hFE-1
DC Current Gain
IC= -20mA; VCE= -5V
hFE-2
DC Current Gain
IC= -1A; VCE= -5V
hFE-3
DC Current Gain
IC= -5A; VCE= -5V
fT
Current-Gain—Bandwidth Product IC= -0.
5A; VCE= -5 V; f= 1MHz
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
MIN TYP.
MAX UNIT
-2.
0 V
-1.
8 V
-50 μA
-50 μA
20
60
200
20
15
MHz
200
pF
hFE-2Classifications
Q
S
P
60-120 80-160 100-200
Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or...
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