PNP Transistor
Description
isc Silicon PNP Power Transistor
2SB1370
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -0.
3V(Typ.
)@IC= -2A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-3
A
ICM
Collector Current-Peak
Collector Power Dissipation @ Ta=25℃
PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-6
A
2 W
30
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.
iscsemi.
com
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isc Silicon PNP Power Transistor
2SB1370
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= -50μA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -50μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.
2A
VBE(sat) Base-Emitter Saturation Voltage
IC= -2A; IB= -0.
2A
ICBO
Collector Cutoff Current
VCB= -60V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE
DC Current Gain
IC= -0.
5A; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC=-0.
5A; VCE= -5V; ftest= 5MHz
MIN TYP.
MAX UNIT
-60
V
-60
V
-5
V
-1.
5 V
-1.
5 V
-10 μA
-10 μA
100
320
15
MHz
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in haz...
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