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2SB1079

PNP Transistor

Description

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB1079 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -10A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Complement to Type 2SD1559 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency po...

INCHANGE

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