Dual NPN Digital Transistor
Description
CYStech Electronics Corp.
Dual NPN Digital Transistors
HBC143TS6R
Spec.
No.
: C369S6R Issued Date : 2003.
05.
23 Revised Date : 2011.
02.
22 Page No.
: 1/6
Features
• Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
• The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
• Only the on/off conditions need to be set for operation, making device design easy.
• Two DTC143T chips in a SOT-363 package.
• Mounting by SOT-323 automatic mounting machines is possible.
• Mounting cost and area can be cut in half.
• Transistor elements are independent, eliminating interference.
• Complements the HBA143TS6R.
• Pb-free package.
Equivalent Circuit
HBC143TS6R
RB2
TR1
TR2
RB1
Outline
SOT-363R
RB1=4.
7kΩ , RB2=4.
7 kΩ
HBC143TS6R
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Each Transistor,TA=25℃)
Spec.
No.
: C369S6R Issued Date : 2003.
05.
23 Revised Date : 2011.
02.
22 Page No.
: 2/6
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation(per device)
Junction Temperature Storage Temperature
Note : 150mW per element must not be exceeded.
Symbol
VCBO VCEO VEBO
IC Pd
Tj Tstg
Limits
Unit
50
V
50
V
5
V
100
mA
200 (Note)
mW
150
°C
-55~+150
°C
Electrical Characteristics (Each Transistor, TA=25℃)
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain Input Resistance Transition Frequency
Symbol VCBO
VCEO
VEBO ICBO IEBO
VCE(sat)
hFE R fT
Min.
Typ.
Max.
Unit
Test Conditions
50 -
- V IC=50μA
50 -
- V IC=1mA
5-
- V IE=50μA
-
- 0.
5 μA VCB=50V
-
- 0.
5 μA VEB=4V
- - 0.
3 V IC...
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