Dual NPN Digital Transistor
Description
CYStech Electronics Corp.
Dual NPN Digital Transistors
HBC124XS6R
Spec.
No.
: C366S6R Issued Date : 2003.
05.
28 Revised Date : 2011.
02.
22 Page No.
: 1/6
Features
• Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
• The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
• Only the on/off conditions need to be set for operation, making device design easy.
•Two DTC124X chips in a SOT-363 package.
•Mounting by SOT-323 automatic mounting machines is possible.
•Mounting cost and area can be cut in half.
•Transistor elements are independent, eliminating interference •Complements the HBA124XS6R
Equivalent Circuit
HBC124XS6R
TR1
RBE2 RB2
TR2 RB1 RBE1
RB1=22kΩ , RB2=22 kΩ RBE1=47kΩ , RBE2=47 kΩ
Outline
SOT-363R
HBC124XS6R
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Each Transistor, Ta=25℃)
Spec.
No.
: C366S6R Issued Date : 2003.
05.
28 Revised Date : 2011.
02.
22 Page No.
: 2/6
Parameter
Supply Voltage Input Voltage
Output Current
Power Dissipation Junction Temperature Storage Temperature
Symbol
VCC VIN IO IO(max.
) Pd Tj Tstg
Limits
Unit
50
V
-10~+40
V
50
mA
100
mA
200 (Note)
mW
150
°C
-55~+150
°C
Note : 150mW per element must not be exceeded.
Characteristics (Each Transistor, Ta=25℃)
Parameter
Input Voltage
Output Voltage Input Current Output Current DC Current Gain Input Resistance Resistance Ratio Transition Frequency
Symbol
VI(off) VI(on) VO(on)
II IO(off)
GI R1 R2/R1 fT
Min.
2.
5 68 15.
4 1.
7 -
Typ.
Max.
Unit
Test Conditions
- 0.
4 V VCC=5V, IO=100μA
-
-
V VO=0.
3V, IO=2mA
0.
1 0.
3 V IO/II=10mA/0.
5mA
- 0.
36 mA VI=5V
- 0.
5 μA VCC=50V, VI=0V
-
-
- VO=5V, IO=5mA
22 28.
6 kΩ -
2.
1 2.
6 - -
250 - MHz VCE=10V, IC=5mA, f=100MHz *
* Transition frequency of the device
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