Dual NPN Digital Transistor
Description
CYStech Electronics Corp.
Dual NPN Digital Transistors
HBC123ES6R
Spec.
No.
: C359S6R Issued Date : 2018.
08.
27 Revised Date : Page No.
: 1/6
Features
Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
Only the on/off conditions need to be set for operation, making device design easy.
Two DTC123E chips in a SOT-363 package.
Mounting by SOT-323 automatic mounting machines is possible.
Mounting cost and area can be cut in half.
Transistor elements are independent, eliminating interference.
Complements the HBA123ES6R.
Pb-free lead plating and halogen-free package.
Equivalent Circuit
HBC123ES6R
TR1
RBE2 RB2
RB1 RBE1
TR2
RB1=2.
2k , RB2=2.
2 k RBE1=2.
2k , RBE2=2.
2 k
Outline
SOT-363R
HBC123ES6R
CYStek Product Specification
CYStech Electronics Corp.
Spec.
No.
: C359S6R Issued Date : 2018.
08.
27 Revised Date : Page No.
: 2/6
Ordering Information
Device
HBC123ES6R-0-T1-G
Package
SOT-363 (Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products Product name
Absolute Maximum Ratings (Each Transistor, Ta=25℃)
Parameter
Collector -Base Voltage Collector -Emitter Voltage Emitter -Base Voltage Input Voltage
Output Current
Power Dissipation, per device Power Dissipation, per transistor Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO VIN
IO IO(max.
)
PD
Tj Tstg
Limits
Unit
50
V
50
V
10
V
-10~+12
V
100
mA
100
mA
300 *1
mW
200 *1
mW
150
C
-65~+150
C
Note:*1.
Device mounted on a FR-4 PCB, single sided copper, ti...
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