Dual NPN Digital Transistor
Description
CYStech Electronics Corp.
Dual NPN Digital Transistors
HBC114YS6R
Spec.
No.
: C355S6R Issued Date : 2003.
05.
23 Revised Date : 2011.
02.
22 Page No.
: 1/6
Features
•Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
•The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
•Only the on/off conditions need to be set for operation, making device design easy.
•Two DTC114Y chips in a SOT-363 package.
•Mounting by SOT-323 automatic mounting machines is possible.
•Mounting cost and area can be cut in half.
•Transistor elements are independent, eliminating interference.
•Complements the HBA114YS6R.
•Pb-free package.
Equivalent Circuit
HBC114YS6R
RBE2 RB2
TR1
TR2
RB1
RBE1
RB1=10kΩ , RB2=10 kΩ RBE1=47kΩ , RBE2=47 kΩ
Outline
SOT-363R
HBC114YS6R
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Each Transistor, Ta=25℃)
Spec.
No.
: C355S6R Issued Date : 2003.
05.
23 Revised Date : 2011.
02.
22 Page No.
: 2/6
Parameter
Supply Voltage Input Voltage
Output Current
Power Dissipation Junction Temperature Storage Temperature
Symbol
VCC VIN IO IO(max.
) Pd Tj Tstg
Limits
Unit
50
V
-6~+40
V
70
mA
100
mA
200 (Note)
mW
150
°C
-55~+150
°C
Note: 150mW per element must not be exceeded.
Electrical Characteristics (Each Transistor, Ta=25℃)
Parameter
Input Voltage
Output Voltage Input Current Output Current DC Current Gain Input Resistance Resistance Ratio Transition Frequency
Symbol
VI(off) VI(on) VO(on)
II IO(off)
GI R1 R2/R1 fT
Min.
3 68 7 3.
7 -
Typ.
Max.
Unit
Test Conditions
- 0.
3 V VCC=5V, IO=100μA
-
-
V VO=0.
3V, IO=1mA
0.
1 0.
3 V IO/II=5mA/0.
25mA
- 0.
88 mA VI=5V
- 0.
5 μA VCC=50V, VI=0V
-
-
- VO=5V, IO=5mA
10 13 kΩ -
4.
7 5.
7 - -
250 - MHz VCE=10V, IC=5mA, f =100MHz *
* Transition frequency...
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