Dual NPN Digital Transistor
Description
CYStech Electronics Corp.
Dual NPN Digital Transistors
HBC114TS6R
Spec.
No.
: C353S6R Issued Date : 2003.
05.
23 Revised Date : 2011.
02.
22 Page No.
: 1/6
Features
•Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
•The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
•Only the on/off conditions need to be set for operation, making device design easy.
•Two DTC114T chips in a SOT-363 package.
•Mounting by SOT-323 automatic mounting machines is possible.
•Mounting cost and area can be cut in half.
•Transistor elements are independent, eliminating interference.
•Complements the HBA114TS6R.
•Pb-free package
Equivalent Circuit
HBC114TS6R
Outline
SOT-363R
RB2
TR1
TR2
RB1
RB1=10kΩ , RB2=10 kΩ
HBC114TS6R
CYStek Product Specification
CYStech Electronics Corp.
Spec.
No.
: C353S6R Issued Date : 2003.
05.
23 Revised Date : 2011.
02.
22 Page No.
: 2/6
Absolute Maximum Ratings (Each Transistor,Ta=25℃)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO
IC Pd Tj Tstg
Limits
Unit
50
V
50
V
5
V
100
mA
200 (Note)
mW
150
°C
-55~+150
°C
Note: 150mW per element must not be exceeded.
Characteristics (Each Transistor, Ta=25℃)
Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain
Input Resistance
Transition Frequency
Symbol VCBO VCEO VEBO ICBO IEBO
VCE(sat)
hFE R fT
Min.
Typ.
Max.
Unit
Test Conditions
50 -
- V IC=50μA
50 -
- V IC=1mA
5-
- V IE=50μA
-
- 0.
5 μA VCB=50V
-
- 0.
5 μA VEB=4V
- - 0.
3 V IC=10mA, IB=1mA
100 - 600 - VCE=5V...
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