Power Amplifier
Description
Data Sheet
GaAs, pHEMT, MMIC, Power Amplifier, 2 GHz to 50 GHz HMC1126
FEATURES
Output power for 1 dB compression (P1dB): 17.
5 dB typical Saturated output power (PSAT): 21 dBm typical Gain: 11 dB typical Output third-order intercept (IP3): 28 dBm typical Supply voltage: 5 V at 65 mA 50 Ω matched input/output Die size: 2.
3 mm × 1.
45 mm × 0.
05 mm
APPLICATIONS
Test instrumentation Microwave radios and VSATs Military and space Telecommunications infrastructure Fiber optics
FUNCTIONAL BLOCK DIAGRAM
VDD 2
HMC1126
3 RFOUT
RFIN 1
Figure 1.
5 VGG1
4 VGG2
13083-001
GENERAL DESCRIPTION
The HMC1126 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 2 GHz to 50 GHz.
The HMC1126 provides 11 dB of gain, 28 dBm output IP3, and 17.
5 dBm of output power at 1 dB gain compression, while requiring 65 mA from a 5 V supply.
The HMC1126 amplifier inputs/outputs are internally matched to 50 Ω facilitating integration into multichip modules (MCMs).
All data is taken with the chip connected via two 0.
025 mm (1 mil) wire bonds of minimal length 0.
31 mm (12 mils).
Rev.
C
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HMC1126
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