Silicon PIN Photodiode
Description
2018-02-23
Silicon PIN Photodiode Version 1.
2
BPW 34 S E9601
Features: • Suitable for reflow soldering • Especially suitable for applications from 400 nm to 1100 nm • Short switching time (typ.
20 ns) • DIL plastic package with high packing density
Applications • Photointerrupters • Industrial electronics • For control and drive circuits • IR remote control of hi-fi and TV sets, dimmers, remote controls of various equipment
Ordering Information Type:
BPW 34 S E9601
Photocurrent
Ordering Code
IP [µA]
Ev = 1000 lx, Std.
Light A, VR = 5 V
80 (≥ 50)
Q65112A1487
2018-02-23
1
Version 1.
2
Maximum Ratings (TA = 25 °C) Parameter Operating and storage temperature range Reverse voltage Total Power dissipation ESD withstand voltage (acc.
to ANSI/ ESDA/ JEDEC JS-001 - HBM)
Characteristics (TA = 25 °C) Parameter Photocurrent (Ev = 1000 lx, Std.
Light A, VR = 5 V) Wavelength of max.
sensitivity Spectral range of sensitivity
Radiant sensitive area Dimensions of radiant sensitive area
Half angle Dark current (VR = 10 V) Spectral sensitivity of the chip (λ = 850 nm) Quantum yield of the chip (λ = 850 nm)
Open-circuit voltage (Ev = 1000 lx, Std.
Light A) Short-circuit current (Ev = 1000 lx, Std.
Light A) Rise and fall time (VR = 5 V, RL = 50 Ω, λ = 850 nm, IP = 800 µA) Forward voltage (IF = 100 mA, E = 0) Capacitance (VR = 0 V, f = 1 MHz, E = 0) Temperature coefficient of VO
BPW 34 S E9601
Symbol
Top; Tstg VR Ptot VESD
Values -40 .
.
.
100
32 150 2000
Unit °C V mW V
Symbol (typ (min)) IP
(typ) (typ)
λS max λ10%
(typ) (typ)
A LxW
(typ)
ϕ
(typ (max)) IR
(typ)
Sλ typ
(typ)
η
(typ (min)) VO
(typ)
ISC
(typ)
tr, tf
(typ)
VF
(typ)
C0
(typ)
TCV
Values 80 (≥ 50)
Unit µA
940 (typ) 330 .
.
.
1100 7.
02 2.
65 x 2.
65
± 60 2 (≤ 30)
nm nm
mm2 mm x mm ° nA
0.
62
A/W
0.
90 365 (≥300)
Electro ns /Photon
mV
80 µA
0.
04
µs
1.
3 V
58 pF
-2.
6 mV / K
2018-02-23
2
Version 1.
2
Parameter
Temperature coefficient of ISC (Std.
Light A)
Noise equivalent power (VR = 10 ...
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