Power MOSFET
Description
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vishay.
com
IRFP26N60L, SiHFP26N60L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration
600 VGS = 10 V
180 61 85 Single
0.
21
D
TO-247AC
G
S
D G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES
• Superfast body diode eliminates the need for external diodes in ZVS applications
Available
• Lower gate charge results in simpler drive Available requirements
• Enhanced dV/dt capabilities offer improved ruggedness
• Higher gate voltage threshold offers improved noise immunity
• Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant.
For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
APPLICATIONS • Zero voltage switching (SMPS) • Telecom and server power supplies • Uninterruptible power supplies • Motor control applications
TO-247AC IRFP26N60LPbF SiHFP26N60L-E3 IRFP26N60L SiHFP26N60L
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current a Linear Derating Factor Single Pulse Avalanche Energy b Repetitive Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Peak Diode Recovery dV/dt c
VGS at 10 V
TC = 25 °C TC = 100 °C
TC = 25 °C
VDS VGS
ID
IDM
EAS IAR EAR PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
b.
Starting TJ = 25 °C, L = 1.
7 mH, Rg = 25 Ω, IAS = 26 A, dV/dt = 21 V/ns (see fig.
12).
c.
ISD ≤ 26 A, dI/dt ≤ 480 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d.
1.
6 mm from case.
LIMIT 600 ...
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