Power MOSFET
Description
IRFP21N60L, SiHFP21N60L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration
600 VGS = 10 V
150 46 64 Single
0.
27
TO-247AC
D
G
S D G
ORDERING INFORMATION
Package Lead (Pb)-free
S N-Channel MOSFET
SnPb
FEATURES
• Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications
• Lower Gate Charge Results in Simple Drive Requirements
Available
RoHS*
COMPLIANT
• Enhanced dV/dt Capabilities Offer Improved Ruggedness
• Higher Gate Voltage Threshold Offers Improved Noise Immunity
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control Applications
TO-247AC IRFP21N60LPbF SiHFP21N60L-E3 IRFP21N60L SiHFP21N60L
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor
VGS at 10 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc
TC = 25 °C
EAS IAR EAR PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
b.
Starting TJ = 25 °C, L = 1.
9 mH, Rg = 25 , IAS = 21 A, dV/dt = 11 V/ns (see fig.
12a).
c.
ISD 21 A, dI/dt 530 A/μs, VDD VDS, TJ 150 °C.
d.
1.
6 mm from case.
LIMIT 600 ± 30 21 13 84 2.
6 420 21 33 330 16
- 55 to + 150 300d 10 1.
1
UNIT
V
A
W/°C mJ A mJ W V/ns °C
lbf · in N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91206 S11-0446-Rev.
C, 14-Mar-11
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com 1
This datasheet is subject to change without notice.
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