SiC
Description
SiC Power Module
BSM120C12P2C201
Application Motor drive Converter Photovoltaics, wind power generation.
Features 1) Low surge, low switching loss.
2) High-speed switching possible.
3) Reduced temperature dependence.
Circuit diagram
Datasheet
1
10(N.
C)
9 8(N.
C)
3,4
5 6 7(N.
C)
2
*Do not connect anything to NC pin.
Construction This product is a chopper module consisting of SiC-DMOSFET and SiC-SBD from ROHM.
Dimensions & Pin layout (Unit : mm)
10 9 8
7 6 5
41 32
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rohm.
com © 2019 ROHM Co.
, Ltd.
All rights reserved.
1/10
8.
Jul.
2019 - Rev.
001
BSM120C12P2C201
Datasheet
Absolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Conditions
Limit
Unit
Drain-source voltage Repetitive reverse voltage Gate-source voltage() Gate-source voltage()
VDSS G-S short VDSS Clamp diode
VGSS D-S short
1200 1200
22 6
V
G - S Voltage (tsurge<300ns) VGSS_surge D-S short
Drain current *1 Source current *1 Forward curent (clamp diode) *1 Total power disspation *4
ID IDRM IDRM
IS ISRM ISRM
IF IFRM IFRM Ptot
DC (Tc=60°C) Pulse (Tc=60°C) 1ms *2 Pulse (Tc=60°C) 10us *2 DC (Tc=60°C ) VGS=18V Pulse (Tc=60°C) 1ms VGS=18V *2 Pulse (Tc=60°C) 10us VGS=18V *2
DC (Tc=60°C ) VGS=18V Pulse (Tc=60°C) 1ms VGS=18V *2 Pulse (Tc=60°C) 10us VGS=18V *2
Tc=25°C
Max Junction Temperature
Tjmax
Junction temperature
Tjop
Storage temperature
Tstg
Isolation voltage
Visol
Terminals to baseplate, f=60Hz AC 1min.
10 to 26 134 240 360 134 240 360 134 240 360 935 175
40 to150 40 to125
2500
A
W °C Vrms
Mounting torque
Main Terminals : M6 screw
4.
5
N·m
Mounting to heat shink : M5 screw
3.
5
(*1) Case temperature (Tc) is defined on the surface of base plate just under the chips.
(*2) Repetition rate should be kept within the range where temperature rise if die should not exceed Tj max.
(*3) Tj is less than 175°C
Example of acceptable VGS waveform tsurge
26V 22V
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rohm.
com © 2019 ROHM Co.
, Ltd.
All rights reserved.
tsurge
0V
6V 10V
2/10 8.
Jul.
2019 - Rev.
00...
Similar Datasheet
- BSM120C12P2C201 SiC - ROHM
