NPN EPITAXIAL SILICON TRANSISTOR
Description
UNISONIC TECHNOLOGIES CO.
, LTD
2SD2686
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
SILICON NPN EPITAXIAL TYPE (DARLINGTON POWER)
DESCRIPTION
The UTC 2SD2686 is a silicon NPN epitaxial type transistors, including a zener diode between collector and base.
it uses UTC’s advanced technology to provide customers high DC current gain.
The UTC 2SD2686 is suitable for solenoid drive and motor drive applications.
FEATURES
* High DC current gain * Zener diode included between collector and base
EQUIVALENT CIRCUIT
Collector
Base
≈5kΩ
≈300Ω
Emitter
ORDERING INFORMATION
Order Number
2SB2686G-x-AB3-R Note: Pin Assignment: B: Base C: Collector E: Emitter
Package SOT-89
Pin Assignment 123 BCE
Packing Tape Reel
MARKING
www.
unisonic.
com.
tw Copyright © 2015 Unisonic Technologies Co.
, Ltd
1 of 3
QW-R208-050.
b
2SD2686
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage Collector-Emitter Voltage
VCBO VCEO
50 60±10
V V
Emitter-Base Voltage Collector Current Base Current
DC Pulse
VEBO IC ICP IB
8V 1A 3A 0.
5 A
Power Dissipation (Note 2) Junction Temperature
PD TJ
500 mW 150 °C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Note: 1 .
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Note: 2.
Mounted on an FR4 board (glass-epoxy; 1.
6mm thick; Cu area, 645mm2)
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage Turn-On Time Storage Time Fall Time
SYMBOL BVCEO ICBO ICEO IEBO hFE
VCE(sat)
VBE(sat) tON tSTG tF
TEST CONDITIONS IC=10mA, IB=0 VCB=45V, IE=0 VCE=45V, IE=0 VEB=8V, IC=0 VCE=2V, IC=1.
0A IC=...
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