Dual N-Channel Enhancement Mode Power MOSFET
Description
CYStech Electronics Corp.
Dual N-Channel Enhancement Mode Power MOSFET
MTB1K0A20KQ8
Spec.
No.
: C043Q8 Issued Date : 2017.
08.
17 Revised Date : 2020.
01.
13 Page No.
: 1/9
Features
• Simple drive requirement • Low on-resistance • Fast switching speed • Dual N-ch MOSFET package • ESD protected gate • Pb-free lead plating & Halogen-free package
BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C
RDSON@VGS=10V, ID=1A
RDSON@VGS=4.
5V, ID=1A
200V 0.
9A
0.
72A 755mΩ(typ) 785mΩ(typ)
Equivalent Circuit
MTB1K0A20KQ8
Outline
SOP-8
D2 D2 D1 D1
G：Gate D：Drain S：Source
G2
S2 G1 S1
Ordering Information
Device MTB1KA20KQ8-0-T3-G MTB1KA20KQ8-0-TF-G
Package
SOP-8 (Pb-free lead plating and halogen-free package)
SOP-8 (Pb-free lead plating and halogen-free package)
Shipping 2500 pcs / tape & reel 4000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel, TF : 4000 pcs/tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB1K0A20KQ8
Preliminary
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25C)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25C Continuous Drain Current @ VGS=10V, TC=100C Continuous Drain Current @ VGS=10V, TA=25C Continuous Drain Current @ VGS=10V, TA=70C Pulsed Drain Current Avalanche Current @ L=0.
1mH Avalanche Energy @ L=1mH, ID=2A, VDD=50V
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating Junction and Storage Temperature Range
Symbol
VDS VGS
ID
IDM IAS EAS
PD
Tj, Tstg
Spec.
No.
: C043Q8 Issued Date : 2017.
08.
17 Revised Date : 2020.
01.
13 Page No.
: 2/9
Limits
200 ±20 1.
4 0.
89 0.
9 (Note 2) 0.
72 (Note 2) 6 (Note 1) 2 2 (Note 4) 2
1.
6 (Note 2) 0.
9 (Note 3)
-55~+150
Unit
V
A
mJ W C
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max...
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