Silicon NPN Epitaxial Planar Transistor
Description
CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
BTD1857AJ3G
BVCEO IC RCESAT
Spec.
No.
: C855J3G Issued Date : 2004.
10.
04 Revised Date :2010.
12.
08 Page No.
: 1/7
160V 1.
5A 310mΩ
Description
• High BVCEO • High current capability • Complementary to BTB1236AJ3G • RoHS compliant and Halogen-free package
Symbol
BTD1857AJ3G
Outline
TO-252AB
TO-252AA
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP
PD
Tj Tstg
BTD1857AJ3G
BCE
B CE
Limits
180 160
5 1.
5 3 1 10 150 -55~+150
Unit
V V V A A W W °C °C
CYStek Product Specification
CYStech Electronics Corp.
Spec.
No.
: C855J3G Issued Date : 2004.
10.
04 Revised Date :2010.
12.
08 Page No.
: 2/7
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
180
-
-
V IC=50µA, IE=0
BVCEO
160
-
-
V IC=1mA, IB=0
BVEBO
5
-
-
V IE=50µA, IC=0
ICBO - - 1 µA VCB=160V, IE=0
IEBO - - 1 µA VEB=4V, IC=0
*VCE(sat)
-
- 0.
6 V IC=1A, IB=100mA
*VBE(on)
-
- 1.
5 V VCE=5V, IC=150mA
hFE1
160
-
320
- VCE=5V, IC=150mA
hFE2
30
-
-
- VCE=5V, IC=500mA
fT - 140 - MHz VCE=5V, IC=150mA
Cob - 27 - pF VCB=10V, IE=0, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Ordering Information
Device BTD1857AJ3G
Package
TO-252 (RoHS compliant and Halogen-free)
Shipping 2500 pcs / Tape & Reel
Marking D1857A
BTD1857AJ3G
CYStek Product Specification
CYStech Electronics Corp.
Spec.
No.
: C855J3G Issued Date : 2004.
10.
04 Revised Date :2010.
12.
08 Page No.
: 3/7
Typical Characteristics
Current Gain vs Collector Current
1000
VCE=5V
Tj=125℃
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
Saturation Voltage---(mV)
Current Gain---HFE
Saturation Voltage---(mV)
100 Tj=25℃
Tj=75℃
10 1
10 100 1000 Co...
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