20A Complementary Power Transistors
Description
MJ15003, MJ15004
20A Complementary Power Transistors
The MJ15003 and MJ15004 are power base power transistors designed for high power audio, disk head positioners, linear amplifiers, switching regulators and other linear applications.
Features:
• High Power Dissipation PD = 250W (TC = 25°C)
• High DC current Gain and Low Saturation Voltage hFE = 25 (Minimum) at IC = 5.
0A, VCE = 2.
0V.
• For Low Distortion Complementary designs.
Pin 1.
Base 2.
Emitter Collector(Case)
Maximum Ratings
Dimensions Minimum Maximum
A
38.
75
39.
96
B
19.
28
22.
23
C 7.
96 9.
28
D
11.
18
12.
19
E
25.
20
26.
67
F 0.
92 1.
09
G 1.
38 1.
62
H
29.
90
30.
40
I
16.
64
17.
30
J 3.
88 4.
36
K
10.
67
11.
18
Dimensions : Millimetres
NPN MJ15003
PNP MJ15004
20 Ampere Complementary Silicon Power
Transistors 140 Volts 250 Watts
TO-3
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage Collector Current-Continuous
-Peak (1) Base Current-Continuous
-Peak (1) Total Power Dissipation at TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range
(1) Pulse Test: Pulse Width = 5ms, Duty Cycle <10%.
Symbol
VCEO(sus)
VCBO
VEBO IC ICM IB IBM
PD
TJ, TSTG
Rating
140
5.
0 20 30 5.
0 10 250 1.
43 -65 to +200
Unit
V
A W W/°C °C
Page 1
31/05/05 V1.
0
MJ15003, MJ15004
20A Complementary Power Transistors
Thermal Characteristics
Characteristic Thermal Resistance Junction to Case
Figure - 1 Power Derating
Symbol Rθjc
Maximum 0.
70
Unit °C/W
PD, Power Dissipation (Watts)
TC, Temperature (°C)
Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Minimum
OFF Characteristics
Collector-Emitter Sustaining Voltage (2) (IC = 200mA, IB = 0)
Collector Cut off Current (VCE = 140V, IB = 0) Collector Cut off Current (VCE = 140V, VBE(off) = 1.
5V) (VCE = 140V, VBE(off) = 1.
5V, TC = 150°C)
VCEO(sus) ICEO ICEX
Emitter Cut off Current (VEB = 5.
0V, IC = 0)
ON Characteristics (2)
IEBO
DC Current Gain (IC = 5.
0A, VCE = 2.
0V)
Collector-Emitte...
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