Enhancement Mode Power Transistor
Description
eGaN® FET DATASHEET
EPC2815 – Enhancement Mode Power Transistor
VIRHDDDi,gSS(SOh3,N3)L4,e0Aa4VdmBWump
Finish:
NEW PRODUCT
95%Pb/5%Sn
EPC2815
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptional...
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