SCR
Description
EC103D1W
SCR
21 August 2018
Product data sheet
1.
General description
Planar passivated ultra sensitive gate Silicon Controlled Rectifier in a SOT223 surface mountable plastic package.
2.
Features and benefits
• Planar passivated for voltage ruggedness and reliability • Ultra sensitive gate • Surface mountable package
3.
Applications
• Electronic ballasts • Safety shut down and protection circuits • Sensing circuits • Smoke detectors • Switched Mode Power Supplies
4.
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse voltage
IT(AV)
average on-state current
half sine wave; Tsp ≤ 114 °C; Fig.
1
IT(RMS)
RMS on-state current half sine wave; Tsp ≤ 114 °C; Fig.
2; Fig.
3
ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C;
state current
tp = 10 ms; Fig.
4; Fig.
5
half sine wave; Tj(init) = 25 °C; tp = 8.
3 ms
Tj junction temperature
Static characteristics
IGT gate trigger current Dynamic characteristics
VD = 12 V; IT = 0.
1 A; Tj = 25 °C; Fig.
9
dVD/dt
rate of rise of off-state voltage
VDM = 268 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit
Min Typ Max Unit - - 400 V - - 0.
5 A - - 0.
8 A - - 8A - - 9A - - 125 °C
- 3 12 µA
- 150 - V/µs
WeEn Semiconductors
EC103D1W
SCR
5.
Pinning information
Table 2.
Pinning information Pin Symbol Description
Simplified outline
1 K cathode
4
2 A anode
3 G gate
4 mb mounting base; connected to
123
anode
SC-73 (SOT223)
Graphic symbol
AK
G sym037
6.
Ordering information
Table 3.
Ordering information
Type number
Package
Name
EC103D1W
SC-73
Description
plastic surface-mounted package with increased heatsink; 4 leads
Version SOT223
EC103D1W
Product data sheet
All information provided in this document is subject to legal disclaimers.
21 August 2018
© WeEn Semiconductors Co.
, Ltd.
2018.
All rights reserved
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WeEn Semiconductors
EC103D1W
SCR
7.
Limiting values
Table 4.
Limiting values In accord...
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