Power MOSFET
Description
OptiMOS™3 Power-MOSFET
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanche rated • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21
BSC080N03LS G
Product Summary
VDS RDS(on),max ID
30 8 53 PG-TDSON-8
V mW A
Type
Package
Marking
BSC080N03LS G
PG-TDSON-8 080N03LS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C
Value 53 33
Unit A
Pulsed drain current3) Avalanche current, single pulse4) Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage 1) J-STD20 and JESD22
V GS=4.
5 V, T C=25 °C
V GS=4.
5 V, T C=100 °C
V GS=10 V, T A=25 °C, R thJA=50 K/W2)
I D,pulse I AS E AS
dv /dt
V GS
T C=25 °C
T C=25 °C
I D=35 A, R GS=25 W
I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C
43 27
14 212 45 15 mJ
6 kV/µs ±20 V
Rev.
2.
1
page 1
2013-05-17
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot T C=25 °C
T A=25 °C, R thJA=50 K/W2)
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
BSC080N03LS G
Value 35
2.
5
-55 .
.
.
150 55/150/56
Unit W
°C
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Thermal characteristics
Thermal resistance, junction - case R thJC
Device on PCB
R thJA
bottom top 6 cm2 cooling area2)
-
- 3.
6 K/W - 20 - 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
30
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=250 µA
1
- 2.
2
Zero gate voltage drain current
I DSS
V DS=30 V, V GS=0 V, T j=25 °C
-
0.
1
1 µA
V DS=30 V, V GS=0 ...
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