Silicon P-Channel MOSFET
Description
2SJ177
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • 4 V gate drive device
Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
November 1996
TO-220FM
D 12 3 1.
Gate
G 2.
Drain 3.
Source
S
2SJ177
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1%
2.
Value at TC = 25°C
Symbol VDSS VGSS ID I *1
D(pulse)
IDR Pch*2 Tch Tstg
Ratings –60 ±20 –20 –80 –20 35 150 –55 to +150
Unit V V A A A W °C °C
2
2SJ177
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage
V(BR)DSS
–60
Gate to source breakdown voltage
V(BR)GSS
±20
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on) resistance
— — –1.
0 —
—
Forward transfer admittance Input capacitance
|yfs| Ciss
8 —
Typ Max Unit ——V
——V
— — — 0.
065
±10 –250 –2.
0 0.
085
µA µA V Ω
0.
09 13 1850
0.
13 — —
S pF
Output capacitance Reverse transfer capacitance Turn-on delay time
Coss Crss td(on)
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery time Note 1.
Pulse test
tr td(off) tf VDF
trr
— — —
— — — —
—
990 — 265 — 15 —
125 — 345 — 235 — –1.
2 —
230 —
pF pF ns
ns ns ns V
ns
Test conditions ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0 VDS = –50 V, VGS = 0 ID = –1 mA, VDS = –10 V ID = –10 A, VGS = –10 V*1 ID = –10 A, VGS = –4 V*1 ID = –10 A, VDS = –10 V*1 VDS = –10 V, VGS = 0, f = 1 MHz
ID = –10 A, VGS = –10 V, RL = 3 Ω
IF = –20 A, VGS = 0
IF = –20 A, VGS = 0, diF/dt = 50 A/µs
See characteristic curves of 2SJ174
3
2SJ177
Drain Curren...
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