DUAL BUFFER/DRIVER
Description
• State-of-the-Art BiCMOS Design
Significantly Reduces ICCZ
• ESD Protection Exceeds 2000 V Per
MIL-STD-883C, Method 3015; Exceeds
200 V Using Machine Model (C = 200 pF,
R = 0)
• High-Impedance State During Power Up
and Power Down
• 3-State True Outputs Drive Bus Lines or
Buffer-Memory Address Registers
• P-N-P Inputs Reduce DC Loading • Package Options Include Plastic
Small-Outline (D) Packages and Standard
Plastic 300-mil DIPs (P)
SN64BCT306 DUAL BUFFER/DRIVER WITH 3-STATE OUTPUTS
SCBS048B – MARCH 1990 – REVISED NOVEMBER 1993
D OR P PACKAGE (TOP VIEW)
1OE
VCC 2OE
2A
1 2 3 4
8 2Y 7 1A 6 GND 5 1Y
description
This dual buffer and line driver is designed specifically to improve both the performance and density of 3-state memory address drivers, clock drivers, and bus-oriented receivers and transmitters.
The SN64BCT306 is characterized for operation from – 40°C to 85°C and 0°C to 70°C.
FUNCTION TABLE (each buffer)
INPUTS OE A
OUTPUT Y
HX
Z
LL
L
LH
H
logic symbol†
logic diagram (positive logic)
1 1OE
7 1A
EN 1
5 1Y
3 2OE
EN
48 2A 1 2Y
† This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.
1 1OE
7 1A
3 2OE
4 2A
5 1Y
8 2Y
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments standard warranty.
Production processing does not necessarily include testing of all parameters.
•POST OFFICE BOX 655303 DALLAS, TEXAS 75265
Copyright © 1993, Texas Instruments Incorporated 3–1
SN64BCT306 DUAL BUFFER/DRIVER WITH 3-STATE OUTPUTS
SCBS048B – MARCH 1990 – REVISED NOVEMBER 1993
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage range, VCC .
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– 0.
5 V to 7 V Input voltage range, VI (see Note 1) .
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