PNP Silicon Transistor
Description
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
CB E
BC556, A, B, BC557, A, B, C BC558, A, B, C
TO-92 Plastic Package
For Lead Free Parts, Device Part # will be Prefixed with "T"
Amplifier Transistors
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
VCEO
Collector Emitter Voltage
VCES
Collector Base Voltage
VCBO
Emitter Base Voltage
VEBO
Collector Current Continuous
IC
Collector Current Peak
ICM
Base Current Peak
IBM
Emitter Current Peak
IEM
Power Dissipation at Ta=25ºC
PD
Derate Above 25ºC
Storage Temperature
Tstg
Junction Temperature
Tj
BC556 65 80 80
BC557 45 50 50 5 100 200 200 200 500
4.
0 - 65 to +150
150
BC558 30 30 30
THERMAL RESISTANCE Junction to Ambient in free air
Rth (j-a)
250
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
VCEO
IC=2mA, IB=0
Collector Base Voltage
VCBO
IC=100µA, IE=0
Emitter Base Voltage
VEBO
IE=100µA, IC=0
Collector Cut Off Current
ICBO VCB=30V, IE=0 ALL
VCB=30V, IE=0, Tj=150ºC ALL
Collector Cut Off Current
ICES VCE=80V, VBE=0
VCE=50V, VBE=0
VCE=30V, VBE=0
VCE=80V, VEB=0, Tj=125ºC
VCE=50V, VEB=0, Tj=125ºC VCE=30V, VEB=0, Tj=125ºC
BC556 >65 >80
<15
<4.
0
BC557 >45 >50 >5.
0 <15 <5.
0
<15
<4.
0
BC558 >30 >30
<15 <4.
0
UNITS V V V V mA mA mA mA
mW mW/ºC
ºC ºC
ºC/W
UNITS V V V nA µA
nA nA nA µA µA µA
BC556_558Rev_2 201205E Continental Device India Limited
Data Sheet
Page 1 of 5
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
CB E
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
DC Current Gain
hFE IC=10µA, VCE=5V
A
B
C
IC=2mA, VCE=5V
BC556
BC557/558 A B C
Collector Emitter Saturation Voltage VCE (sat)
Base Emitter Saturation Voltage
VBE (sat)
Base Emitter On Voltage
VBE (on)
IC=100mA, VCE=5V A B C
IC=10mA, IB=0.
5mA IC=100mA, IB=5mA IC=...
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