MOSFET
Description
IPD70R360P7S
MOSFET
700VCoolMOSªP7PowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.
ThelatestCoolMOS™P7isanoptimizedplatformtailoredtotargetcost sensitiveapplicationsinconsumermarketssuchascharger,adapter, lighting,TV,etc.
ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction MOSFET,combinedwithanexcellentprice/performanceratioandstateof theartease-of-uselevel.
Thetechnologymeetshighestefficiency standardsandsupportshighpowerdensity,enablingcustomersgoing towardsveryslimdesigns.
Features
•ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss •Excellentthermalbehavior •IntegratedESDprotectiondiode •Lowswitchinglosses(Eoss) •Productvalidationacc.
JEDECStandard
Benefits
•Costcompetitivetechnology •Lowertemperature •HighESDruggedness •Enablesefficiencygainsathigherswitchingfrequencies •Enableshighpowerdensitydesignsandsmallformfactors
Potentialapplications
RecommendedforFlybacktopologiesforexampleusedinChargers, Adapters,LightingApplications,etc.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj=25°C RDS(on),max
700 0.
36
V Ω
Qg,typ
16.
4
nC
ID,pulse
34
A
Eoss @ 400V
1.
8
µJ
V(GS)th,typ
3
V
ESD class (HBM) 2
Type/OrderingCode IPD70R360P7S
Package PG-TO 252-3
Marking 70S360P7
DPAK
tab 2 1
3 Drain
Pin 2, Tab Gate Pin 1
Source Pin 3
RelatedLinks see Appendix A
Final Data Sheet
1 Rev.
2.
1,2018-02-12
700VCoolMOSªP7PowerTransistor
IPD70R360P7S
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1 Maximum r...
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