Photomicrosensor
Description
Photomicrosensor (Reflective)
EE-SY169A
Be sure to read Precautions on page 24.
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
■ Features
• High-quality model with plastic lenses.
• Highly precise sensing range with a tolerance of ±0.
6 mm horizon-
tally and vertically.
• Convergent reflective model with infrared LED.
• Recommended sensing distance = 4.
0 mm
■ Absolute Maximum Ratings (Ta = 25°C)
Surface A
1±0.
1 dia.
(see note) (see note)
Two, C0.
2 1±0.
1 dia.
Internal Circuit
A
C
KE
Terminal No.
A K C E
Name Anode Cathode Collector Emitter
Note: These dimensions are for the surface A.
Other lead wire pitch dimensions are for the housing surface.
Unless otherwise specified, the tolerances are as shown below.
Dimensions
Tolerance
3 mm max.
±0.
3
3 < mm ≤ 6
±0.
375
6 < mm ≤ 10
±0.
45
10 < mm ≤ 18
±0.
55
18 < mm ≤ 30
±0.
65
Emitter
Item Forward current
Pulse forward current
Reverse voltage
Detector
Collector–Emitter voltage
Emitter–Collector voltage
Collector current
Collector dissipation
Ambient tem- Operating
perature
Storage
Soldering temperature
Symbol IF
IFP
VR VCEO
Rated value
50 mA (see note 1)
1A (see note 2)
3V
30 V
VECO
---
IC 20 mA
PC 100 mW (see note 1)
Topr 0°C to 70°C
Tstg –20°C to 80°C
Tsol 260°C (see note 3)
Note: 1.
Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2.
The pulse width is 10 μs maximum with a frequency of 100 Hz.
3.
Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Emitter Detector
Item Forward voltage Reverse current Peak emission wavelength Light current
Symbol VF IR λP IL
Value 1.
5 V max.
10 μA max.
920 nm typ.
160 μA min.
, 2,000 μA max.
Dark current Leakage current
ID ILEAK
Rising time Falling time
Collector–Emitter saturated volt- VCE (sat) age
Peak spectral sensitivity wave- λP length
tr
tf
2 nA typ.
, 200 nA max.
2 μA max.
---
850 nm typ.
30 μs typ.
30 μs typ.
Condition IF = 30 mA VR = 4 V ...
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