N-Channel Power Field Effect Transistor
Description
HI-SINCERITY
MICROELECTRONICS CORP.
H01N45A
N-Channel Power Field Effect Transistor
Features
Typical RDS(on)=4.1Ω Extremely High dv/dt Capability 100% Avalanche Tested Gate Charge Minimized New High Voltage Benchmark
Applications
Switch Mode Low Power Supplies (SMPS) Low Power, Low Cost CFL (Compact Fluorescent Lamps) Low Power Battery Char...
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