NPN Silicon Transistor
Description
DDAATTAA SSHHEEEETT
SILICON TRANSISTOR
NE68133
/
2SC3583
JEITA Part No.
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
+0.
1UT −0.
05
1.
1PHASEto1.
4 0.
3
DESCRIPTION The NE68133 / 2SC3583 is an NPN epitaxial silicon transistor
designed for use in low-noise and small signal amplifiers from VHF band to
UHF band.
Low-noise figure, high gain, and high current capability
achieve a very wide dynamic range and excellent linearity.
This is
achieved by direct nitride passivated base surface process (DNP
process) which is a proprietary new fabrication technique.
FEATURES
• NF • Ga
1.
2 dB TYP.
13 dB TYP.
@f = 1.
0 GHz @f = 1.
0 GHz
PACKAGE DIMENSIONS (Units: mm)
2.
8±0.
2 1.
5
0.
65
+0.
1 −0.
15
0.
4
2 13
+0.
1 −0.
05
2.
9±0.
2O 0.
95 0.
95
0.
4
+0.
1 −0.
06
0.
16
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
VCBO
20
Collector to Emitter Voltage VCEO
10
Emitter to Base Voltage
VEBO
1.
5
Collector Current
IC 65
Total Power Dissipation
PT...
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