SILICON EPITAXIAL PLANAR DIODES - GOOD-ARK Electronics
Description
1N914 THRU 1N4454
SILICON EPITAXIAL PLANAR DIODES
Features
Silicon Epitaxial Planar Diodes for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34.
D IM E N S IO N S D IM A B C D IM E N S IO N S D IM A B C D in c h e s M in .
0 .
6 3 0 M ax.
0 .
11 4 0 .
0 7 5 0 .
0 1 7 M in .
1 6 .
0 mm M ax.
2 .
9 1 .
9 0 .
4 2 N o te D in c h e s M in .
1 .
0 8 3 M ax.
0 .
1 5 4 0 .
0 7 5 0 .
0 2 0 M in .
2 7 .
5 0 mm M ax.
3 .
9 1 .
9 0 .
5 2 N o te
Electrical Characteristics
Type Peak reverse voltage VRM V 1N914 1N4149
1)
Max.
aver.
rectified current IO mA 75 150 200 150 150 150
2)
Max.
power dissip.
at 25 Ptot mW 500 500 500 400 400 500 500 500 400 400 400 400
Max.
junction temperature Tj 200 200 200 175 175 200 200 200 175 175 175 175
Max.
forward voltage drop
Max.
reverse current
Max.
reverse recovery time
VF V 1.
0 1.
0 1.
0 0.
55 0.
55 1.
0 1.
0 1.
0 0.
54 0.
50 0.
55 1.
0
at IF mA 10 10 200 0.
10 0.
10 0.
10 20 30 0.
50 0.
10 0.
01 10
In nA 25 25 100 50 50 100 25 25 50 50 50 100
at VR V 20 20 50 30 50 25 20 20 30 30 20 50
trr nS Max.
4.
0 Max.
4.
0 Max.
4.
0 Max.
2.
0 Max.
2.
0 Max.
2.
0 Max.
4.
0 Max.
4.
0 Max.
4.
0 Max.
10 Max.
4.
0
Conditions IF=10mA, VR=6V, RL=100 IF=10mA, VR=6V, RL=100 , to IR=1mA , to IR=1mA
100 100 50 40 75 35 100 100 40 40 30 75
1N4150 1N4152 1N4153 1N4154 1N4447 1N4449
1) 1)
IF=IR=10 to 200 mA, to 0.
1 IF IF=10mA, VR=6V, RL=100 IF=10mA, VR=6V, RL=100 IF=10mA, VR=6V, RL=100 IF=10mA, VR=6V, RL=100 IF=10mA, VR=6V, RL=100 IF=IR=10mA, to IR=1mA IF=IR=10mA, to IR=1mA IF=IR=10mA, to IR=1mA , to IR=1mA , to IR=1mA , to IR=1mA , to IR=1mA , to IR=1mA
150 150 150 150 150 150
1N4450 1N4451 1N4453 1N4454
Notes: (1) These diodes are also avaiable in glass case DO-34 (2) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature Parameters for diodes in case DO-34: Ptot=300mW TS=-65 to +175 TJ=175 Rtha 0.
4K/mW
1
...
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