N-Channel MOSFET
Description
Analog Power
AM1420N
N-Channel 20V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
• Low rDS(on) provides higher efficiency and extends battery life
• Low thermal impedance copper leadframe D
SC70-6 saves board space • Fast switching speed • High performance trench technology
D G
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
20 0.
058 @VGS= 4.
5 V 0.
082 @VGS= 2.
5V
ID (A) 4.
3
3.
6
SC70-6 Top View
D1
16 25
D D
G1
34
S
S1
N-Channel MOSFET
ABSOLUTEMAXIMUMRATINGS (TA = 25 oCUNLESS OTHERWISENOTED)
Parameter
Symbol Maximum Units
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC TA=70oC
ID
IDM
20 ±8
V
4.
3 3.
5 ...
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