N-Channel MOSFET
Description
Analog Power
AM1360NE
N-Channel 60V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
60 3 @ VGS = 10 V 3.
3 @ VGS = 4.
5V
• Low rDS(on) provides higher efficiency and extends battery life
• Low thermal impedance copper leadframe SC70-3 saves board space
• Fast switching speed
• High performance trench technology
ID (A) 0.
3 0.
3
G
S
D
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta
Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Power Dissipationa
Operating Junction and Storage Temperature Range
VDS
...
Similar Datasheet
