MOSFET
Description
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™C6600V
600VCoolMOS™C6PowerTransistor IPx60R950C6
DataSheet
Rev.
2.
5 Final
PowerManagement&Multimarket
600V CoolMOS™ C6 Power Transistor
IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6
1
Description
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation.
The resulting devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use.
Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Features
• Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • Fully qualified according to JEDEC for Industrial Applications • Pb-free plating, Halogen free mold compound
Applications
PFC stages, hard switching PWM stages and resonant switching PWM stages for e.
g.
PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.
Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.
drain pin 2
gate pin 1
source pin 3
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max RDS(on),max Qg,typ ID,pulse Eoss @ 400V Body diode di/dt
650 0.
95 13 12 1.
3 500
V " nC A µJ A/µs
Type / Ordering Code IPD60R950C6 IPB60R950C6 IPP60R950C6 IPA60R950C6
Package PG-TO252 PG-TO263 PG-TO220 PG-TO220 FullPAK
Marking 6R950C6
Related Links !IFX C6 Product Brief !IFX C6 Portfolio !IFX CoolMOS Webpage !IFX Design tools
Rev.
2.
5
Page 2
2020-05-20
600V CoolMOS™ C6 Power Transistor IPx60R950C6
Table of Contents
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