NPN General Purpose Transistor
Description
Transistors
BC848BW / BC848B
NPN General Purpose Transistor
BC848BW / BC848B
zFeatures 1) BVCEO minimum is 30V (IC=1mA) 2) Complements the BC858B / BC858BW.
zAbsolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current
Symbol VCBO VCEO VEBO IC
Collector power BC848BW dissipation
BC848B
PC
Junction temperature
Tj
Storage temperature
Tstg
∗ When mounted on a 7×5×0.
6mm ceramic board.
Limits 30 30 5 0.
1 0.
2 0.
2 0.
35 150
−65~+150
Unit V V V A
W W W∗ °C °C
zExternal dimensions (Unit : mm)
BC848BW SOT-323
ROHM : UMT3 EIAJ : SC-70
2.
0±0.
2 1.
3±0.
1 0.
65 0.
65 (1) (2)
0.
9±0.
1 0.
2 0.
7±0.
1
1.
25±0.
1 2.
1±0.
1 0.
1~0.
4
(3)
0.
3
+0.
1 −0
0.
15±0.
05
All terminals have same dimensions
0~0.
1
(1) Emitter (2) Base (3) Collector
BC848B, BC848C
SOT-23
2.
9±0.
2 1.
9±0.
2 0.
95 0.
95
0.
95
+0.
2 −0.
1
0.
45±0.
1
(1) (2) (3)
1.
3
+0.
2 −0.
1
2.
4±0.
2
0~0.
1 0.
2Min.
ROHM : SST3
0.
4
+0.
1 −0.
05
0.
15−+00.
.
016
All terminals have same dimensions
(1) Emitter (2) Base (3) Collector
zElectrical characteristics (Ta=25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage
Collector cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage DC current transfer ratio Transition frequency Collector output capacitance Collector output capacitance
Symbol BVCBO BVCEO BVEBO
ICBO
VCE(sat)
VBE(on) hFE fT Cob Cib
Min.
30 30 5 − − − − 0.
58
200 − − −
Typ.
− − − − − − − − −
200 3 8
Max.
− − −
100 5
0.
25 0.
6 0.
77 450 − − −
Unit
Conditions
V IC=50µA
V IC=1mA
V IE=50µA
nA VCB=30V
µA VCB=30V, Ta=150°C
IC/IB=10mA/0.
5mA V
IC/IB=100mA/5mA
V VCE/IC=5V/10mA
− VCE/IC=5V/2mA
MHz VCE=5V, IE=−20mA, f=100MHz
pF VCB=10V, IE=0, f=1MHz
pF VEB=0.
5V, IE=0, f=1MHz
(SPEC-C22)
Rev.
A
1/5
Transistors
zPackaging specifications
Part No.
Packaging type
Marking Code
Basic ordering unit (pieces)
BC848BW UMT3 G1K T106 3000
BC848B SST3 G1K T11...
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