PNP Amplifier
Description
BC369
BC369
B
C
TO-92
E
PNP General Purpose Amplifier
This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.
2 A.
Sourced from Process 77.
Absolute Maximum Ratings*
Symbol
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TA = 25°C unless otherwise noted
Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range
Value
20 25 5.
0 1.
5 -55 to +150
Units
V V V A °C
VCEO VCES VEBO IC TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
BC369 625 5.
0 83.
3 200
Units
mW mW/°C °C/W °C/W
1997 Fairchild Semiconductor Corporation
BC369
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CES V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current IC = 10 mA, IB = 0 IC = 100 µ A, IE = 0 IE = 10 µ A, IC = 0 VCB = 25 V, IE = 0 VCB = 25 V, IE = 0, TA = 150°C VEB = 5.
0 V, IC = 0 20 25 5.
0 10 1.
0 10 V V V µA mA µA
ON CHARACTERISTICS
hFE DC Current Gain IC = 5.
0 mA, VCE = 10 V IC = 0.
5 A, VCE = 1.
0 V IC = 1.
0 A, VCE = 1.
0 V IC = 1.
0 A, IB = 100 mA IC = 1.
0 A, VCE = 1.
0 V 50 85 60 375 0.
5 1.
0 V V
VCE(sat) VBE(on)
Collector-E...
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