N-Channel Advanced Power MOSFET
Description
Features
N-Channel Enhancement mode Very low on-resistance RDS(on) @ VGS=4.
5 V Fast Switching 100% Avalanche Tested Pb-free lead plating; RoHS compliant; Hg-Free
VSI040N04MS
40V/20A N-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.
5 V ID
40 V 36 mΩ 42 mΩ 20 A
TO-251-S
Part ID VSI040N04MS
Package Type TO-251-S
Marking 040N04M
Tape and reel information 80pcs/Tube
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM Pulse drain current tested ① PD Maximum power dissipation VGS Gate-Source voltage
TC =25°C TC =25°C TC =100°C TC =25°C TC =25°C
TSTG TJ EAS
Storage temperature range Maximum Junction Temperature Avalanche energy, single pulsed ②
ID=8A
Thermal Characteristics
Symbol R JC R JA
Parameter
Thermal Resistance-Junction to Case Thermal Resistance Junctio...
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