N-Channel Advanced Power MOSFET
Description
Features
N-Channel Enhancement mode Very low on-resistance RDS(on) @ VGS=4.
5 V Fast Switching 100% Avalanche Tested Pb-free lead plating; RoHS compliant
VSB012N03MS
30V/38A N-Channel Advanced Power MOSFET
V DS
30 V
R @DS(on),TYP VGS=10 V
9 mΩ
R @DS(on),TYP VGS=4.
5V
12 mΩ
I D 38 A
TDFN3.
3x3.
3
Part ID VSB012N03MS
Package Type TDFN3.
3x3.
3
Marking 012N03M
Tape and reel information
5000pcs/Reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM EAS
Pulse drain current tested ① Avalanche energy, single pulsed ②
IAS Avalanche energy, single pulsed ②
PD Maximum power dissipation
VGS Gate-Source voltage
TSTG TJ
Storage and operating temperature range
Thermal Characteristics
Symbol
Parameter
RJC Thermal Resistance-Junction to Case RJA Thermal Resistance Junction-Ambient
TC =25°C TC =25...
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