NPN SILICON POWER TRANSISTORS
Description
BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997
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Designed for Complementary Use with the BD246 Series 80 W at 25°C Case Temperature
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SOT-93 PACKAGE (TOP VIEW) 1
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10 A Continuous Collector Current 15 A Peak Collector Current Customer-Specified Selections Available
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3 Pin 2 is in electrical contact with the mounting base.
MDTRAA
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2
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING BD245 Collector-emitter voltage (RBE = 100 Ω) BD245A BD245B BD245C BD245 Collector-emitter voltage (IC = 30 mA) BD245A BD245B BD245C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.
2 mm from case for 10 seconds NOTES: 1.
2.
3.
4.
V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCER SYMBOL VALUE 55 70 90 115 45 60 80 100 5 10 15 3 80 3 62.
5 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT
This value applies for tp ≤ 0.
3 ms, duty cycle ≤ 10%.
Derate linearly to 150°C case temperature at the rate of 0.
64 W/°C.
Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.
4 A, R BE = 100 Ω, VBE(off) = 0, RS = 0.
1 Ω, VCC = 20 V.
PRODUCT
INFORMATION
Information is current as of publication date.
Products conform to specifications in accordance with the terms of Power Innovations standard warranty.
Production processing does not necessarily include testing of all parameters.
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BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
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