COMPLEMENTARY SILICON POWER TRANSISTORS
Description
BD241A/B/C BD242A/B/C
COMPLEMENTARY SILICON POWER TRANSISTORS
s s
SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION The BD241A, BD241B and BD241C are silicon epitaxial-base NPN transistors mounted in Jedec TO-220 plastic package.
They are inteded for use in medium power linear and switching applications.
The complementary PNP types are BD242A, BD242B and BD242C respectively.
TO-220
3 1 2
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter NPN PNP V CER V CEO V EBO IC I CM IB P tot P tot T stg Tj Collector-Base Voltage (R BE = 100 Ω ) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 25 o C Total Dissipation at T amb ≤ 25 o C Storage Temperature Max.
Operating Junction Temperature BD241A BD242A 70 60 Value BD241B BD242B 90 80 5 3 5 1 40 2 -65 to 150 150 BD241C BD242C 115 100 V V V A A A W W
o o
Unit
C C
For PNP types voltage and current values are negative.
June 1997
1/4
BD241A/B/C/BD242A/B/C
THERMAL DATA
R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.
13 62.
5
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CES I CEO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = rated V CEO for BD241A/BD242A for BD241B/BD242B for BD241C/BD242C V EB = 5 V I C = 30 mA for BD241A/BD242A for BD241B/BD242B for BD241C/BD242C IC = 3 A IC = 3 A IC = 1 A IC = 3 A I C = 0.
5 A I C = 0.
5 A I B = 0.
6 A V CE = 4 V V CE = 4 V V CE = 4 V V CE = 10 V V CE = 10 V f = 1MHz f = 1KHz 25 10 3 20 V CE = 30 V V CE = 60 V V CE = 60 V Min.
Typ.
Max.
0.
2 0.
3 0.
3 0.
3 1 Unit mA mA mA mA mA
I EBO
V CEO(sus) ∗ Collector-Emitter Sustaining Voltage
60 80 100 1.
2 1.
8
V V V V V
V CE(sat) ∗ V BE ∗ h FE ∗ hfe
Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current...
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