N-Channel MOSFET
Description
CEP60N10V/CEB60N10V
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
100V, 57A, RDS(ON) = 24mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
S
...
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