N-Channel MOSFET
Description
CEZ3R03
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 85A, RDS(ON) = 4.0mΩ @VGS = 10V. RDS(ON) = 6.0mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired. Surface mount Package.
DDDD
GSSS
PR-PACK (5*6)
DD D D 8 7 65
1 234 S SSG
...
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