N-Channel MOSFET
Description
CEH3688
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 3.0A, RDS(ON) = 78mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 4.5V. RDS(ON) = 155mΩ @VGS = 2.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TSOP-6 package.
4 5 6
3 2 1
TSOP-6
D1 S1 D2 654
1 23 G1 S2 G2
ABSOLUTE...
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