P-Channel MOSFET
Description
CEH2307
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -4A , RDS(ON) = 78mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable. Lead free product is acquired. TSOP-6 package.
4 5 6
3 2 1 TSOP-6
G(3)
D(1,2,5,6,) S(4)
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise note...
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