Dual N-Channel MOSFET
Description
CEG2108E
Dual N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
20V, 8.5A, RDS(ON) = 14mΩ @VGS = 10V.
RDS(ON) = 15mΩ @VGS = 4.5V. RDS(ON) = 20mΩ @VGS = 2.5V. RDS(ON) = 28mΩ @VGS = 1.8V. Super High dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TSSOP-8 fo...
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