CEC3833
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 17A, RDS(ON) = 5.0mΩ @VGS = 10V. RDS(ON) = 7.2mΩ @VGS = 4.5V.
Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.
D
G S
5 67 8 Bottom View
DFN3*3
4 321
ABSOLUTE MAXIMUM RATINGS TA = 25...
