Triac
Description
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16UM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
BCR16UM
OUTLINE DRAWING
Dimensions in mm
2.
8 ± 0.
2
10.
2
4.
5 1.
27
15.
5
V
φ3.
8 ± 0.
2
13.
0 MIN
4.
2 MAX
TYPE NAME VOLTAGE CLASS
1.
4
0.
8 2.
54 0.
6 2.
6 ± 0.
4
2.
54
V Measurement point of
¡IT (RMS) 16A ¡VDRM .
.
400V/600V ¡IFGT !, I RGT !, IRGT # .
.
.
15mA ¡Viso .
.
1500V APPLICATION Light dimmer
T1 TERMINAL T2 TERMINAL GATE TERMINAL TO-220
MAXIMUM RATINGS
Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V
Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — Viso
Parameter RMS on-state current Surge on-state current I2t for fusing
Conditions Commercial frequency, sine full wave 360° conduction, Tc=79 °C V 3 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Ratings 16 170 121 5 0.
5 10 2 –40 ~ +125 –40 ~ +125
4.
5
case temperature
Unit A A A2s W W V A °C °C g V
Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Isolation voltage Typical value Ta=25°C, AC 1 minute, T 1 · T2 · G terminal to case
2.
3 1500
V1.
Gate open.
Feb.
1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16UM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD R th (j-c) Gate non-trigger voltage Thermal resistance Gate trigger current V 2 Gate trigger voltage V2 Parameter Repetitive peak off-state current On-state voltage ! @ # ! @ # Tj=125°C, VD=1/2VDRM Junction to case V3 V4 Tj=25 °C,...
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