NPN Silicon Digital Transistor
Description
BCR 108W
NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.
2kΩ, R2=47kΩ)
Type BCR 108W
Marking Ordering Code WHs Q62702-C2275
Pin Configuration 1=B 2=E 3=C
Package SOT-323
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 124°C Junction temperature Storage temperature Symbol Values 50 50 5 10 100 250 150 - 65 .
.
.
+ 150 mA mW °C Unit V
VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg
Thermal Resistance Junction ambient
1)
RthJA RthJS
≤ 240 ≤ 105
K/W
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.
5mm / 0.
5cm2 Cu
Semiconductor Group
1
Nov-26-1996
BCR 108W
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min.
DC Characteristics Collector-emitter breakdown voltage Values typ.
max.
Unit
V(BR)CEO
50 2.
2 0.
047 -
V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
V(BR)CBO
50
IC = 10 µA, IB = 0
Collector cutoff current
ICBO
100
nA µA 164 70 V 0.
3 0.
8 1.
1 2.
9 0.
052 kΩ -
VCB = 40 V, IE = 0
Emitter cutoff current
IEBO hFE VCEsat Vi(off)
0.
4
VEB = 5 V, IC = 0
DC current gain
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage 1)
IC = 5 mA, IB = 0.
5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on Voltage
Vi(on)
0.
5
IC = 2 mA, VCE = 0.
3 V
Input resistor Resistor ratio
R1 R1/R2
1.
5 0.
042
AC Characteristics Transition frequency
fT
170 2 -
MHz pF -
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
Ccb
VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300µs; D < 2%
Semiconductor Group
2
Nov-26-1996
BCR 108W
DC Current Gain hFE = f (IC) VCE = 5V (common emitter configuration)
Collector-Emitter Saturation Voltage VCEsat = f(IC), hFE = 20
10 3
10 2
-
hFE
10 2
IC
mA
10 1
10 1
10 0 -1 10
10
0
10
1
mA
10 0 0.
0
0.
1
0.
2
0.
3
V
IC
0.
5 V CEsat
Input on Voltage Vi(on) = f(IC) VCE = ...
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