P-Channel Power Mosfet
Description
Production specification
P-Channel Enhancement Mode Power Mosfet
FEATURES
Super High Dense Cell Design for Extremely Pb
Low RDS(ON)
Lead-free
Reliable and Rugged
Electrostatic Sensitive Devices.
BL2311
APPLICATIONS
Power Management in Notebook.
Portable Equipment.
Battery Powered System.
SOT-23
ORDERING INFORMATION
Type No.
Marking
BL2311
2311
Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS VGSS ID IDM PD RθJA TJ, Tstg
Drain-Source voltage
-20
Gate -Source voltage
Maximum Drain current TA=25℃ TA=70℃
Pulsed Drain current
±8
-4.
2 -3.
4
-30
Power Dissipation
1.
37
Thermal resistance,Junction-to-Ambient 90
Operating Junction and Storage Temperature Range
-55~+150
Units V V
A A W ℃/W ℃
C336 Rev.
A
www.
gmesemi.
com
1
Production specification
P-Channel Enhancement Mode Power Mosfet
BL2311
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Tes...
Similar Datasheet
