N-Channel Power Mosfet
Description
Production specification
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A
Pb
VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A Lead-free
VDS=20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0A
Electrostatic Sensitive Devices.
BL2300
APPLICATIONS
Power Management in Note book. Portable Equipment. Battery Powered Syst...
Similar Datasheet