N-Channel Power Mosfet
Description
Production specification
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
RDS(ON) =1.2Ω@VGS = 10V.
Pb
Ultra Low gate charge (typical 28nC)
Lead-free
Low reverse transfer capacitance (CRSS = typical 12.0 pF)
Fast switching capability
Avalanche energy specified
Improved dv/dt capability, high ruggedness
BL8N60F
ITO-220AB
MAXI...
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