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2SC4003

GME

NPN Epitaxial Planar Silicon Transistor


Description
NPN Epitaxial Planar Silicon Transistor FEATURES  High hFE hFE=60 to 200.  Low VCE(sat)=0.6V. Pb Lead-free Production specification 2SC4003 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO VCEO Collector-Base Volage Collector-Emitter Voltage 400 V 400 V VEBO Emitter...



GME

2SC4003

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