Dual N-channel dual gate MOS-FET
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
MBD128
BF1204 Dual N-channel dual gate MOS-FET
Product specification Supersedes data of 2000 Nov 13 2001 Apr 25
Philips Semiconductors
Product specification
Dual N-channel dual gate MOS-FET
FEATURES • Two low noise gain controlled amplifiers in a single package • Superior cross-modulation performance during AGC • High forward transfer admittance • High forward transfer admittance to input capacitance ratio.
APPLICATIONS • Gain controlled low noise amplifiers for VHF and UHF applications with 3 to 9 V supply voltage, such as digital and analog television tuners and professional communications equipment.
DESCRIPTION The BF1204 is a combination of two equal dual gate MOS-FET amplifiers with shared source and gate 2 leads.
The source and substrate are interconnected.
Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC.
Integrated diodes between the gates and source protect against excessive input voltage surges.
The transistor has a SOT363 micro-miniature plastic package.
PINNING - SOT363 PIN 1 2 3 4 5 6 gate 1 (a) gate 2 gate 1 (b) drain (b) source drain (a)
BF1204
DESCRIPTION
handbook, halfpage
6
5
4
d (a)
s
d (b)
AMP a
AMP b
1
2
3
g1 (a)
g2
g1 (b)
MBL252
Top view
Marking code: L3-
Fig.
1 Simplified outline and symbol.
QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN.
− − Ts ≤ 102 °C; note 1 ID = 12 mA; f = 1 MHz ID = 12 mA; f = 1 MHz f = 1 MHz f = 800 MHz − 25 − − − − TYP.
− − − 30 1.
7 15 1.
1 105 − MAX.
UNIT
Per MOS-FET; unless otherwise specified VDS ID Ptot yfs Cig1-s Crss NF Xmod Tj Note 1.
Ts is the temperature at the soldering point of the source lead.
CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling.
For further information, refer to Philips specs.
: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2001 Apr 25 2 drain-source voltage drain current (DC)...
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